Annealing effects in H- and O-terminated P-doped diamond (111) surfaces

Abstract

The annealing induced effects on hydrogen (H)- and oxygen (O)-terminated P-doped (111) diamond surfaces were investigated by X-ray photoelectron spectroscopy (XPS). Thermally triggered systematic shift of carbon 1s (C1s) peaks was observed for both the surface terminations. The shift is characterized by H- and O-desorption kinetics until a clean surface is produced and then by the non-diamond carbon layer formation on the diamond surface. Desorption induced shift of binding energy (BE) in H-terminated surface is larger than O-terminated diamond surface since the surface bonding configuration of H and O is different. The clean surface emerges at a lower temperature for O-terminated surface than it turned out in H-terminated surface. The growth of non-diamond carbon layer was analysed through loss spectrum of C1s core levels.