Abstract
Laser-induced terahertz (THz) emission in Ta/CoFeB/MgO films with various thicknesses of CoFeB and for various annealing temperatures was studied. The THz emission intensity exhibited its maximum value for a CoFeB layer thickness of approximately 1.0 nm, and this maximum value was enhanced by 1.5 times by annealing at 300 °C. A correlation was found in the annealing dependence between saturation magnetization, conductivity, and THz emission intensity. The origin of the enhancement of THz emission intensity due to annealing was discussed in terms of the increase in the mean free path of majority spin hot electrons in the CoFeB layer with crystallization due to the annealing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
