Abstract
Electrical conductivity along and across the layers, its anisotropy, and the Hall effect for undoped and annealed Te-doped samples of InSe are investigated in the temperature range 80 to 400 K. Variations of electrical parameters of annealed samples are determined during the relaxation process. It is established that peculiarities of the annealing effect as well as the relaxation process in annealed samples are induced by the presence of interlayer impurity precipitates of In atoms adsorbed by stacking faults. High values of the anisotropy ratio in n-InSe and its activated character below 250 K are caused by these impurity aggregates.
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