Abstract
Using a rather simple chemical vapor deposition apparatus, transparent conducting tin oxide films were fabricated through the decomposition of SnCl 4·5H 2O. The films showed good electrical properties but high chlorine contamination. We have found that the chlorine can be removed by annealing at 500 K in a hydrogen ambient. This has been established by Auger electron spectroscopy and Rutherford backscattering spectrometry.
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