Abstract
In this work, p-CuGaO 2 /n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates. Structural, morphology, optical and electrical properties of CuGaO 2 /ZnO heterojunction was investigated as a function of annealing duration. The structural properties show the ZnO films (002) peak were stronger at the range of 34° while CuGaO 2 (015) peak is not visible at 44°. The surface morphology revealed that RMS roughness become smoother as the annealing duration increase to 30 minutes and become rougher as the annealing duration is increased to 60 minutes. The optical properties of CuGaO 2 /ZnO heterojunction diode at 30 minutes exhibit approximately 75% optical transmittance in the invisible region. The diodes exhibited a rectifying characteristic and the maximum forward current was observed for the diode annealed for 30 minutes. The diodes show an ideality factor range from 43.69 to 71.29 and turn on voltage between 0.75 V and 1.05 V.
Highlights
Transparent conducting oxide (TCO) thin films have been extensively studied because it’s have very interesting properties in various electrical and optical application such as gas sensor, light-emitting diodes, solar cells, thin-film transistors and varistor [1,2]
This paper describes the deposition of p-CuGaO2/nZnO heterojunction diodes by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates
CuGaO2/ZnO heterojunction thin films were prepared on commercially available indium tin oxide (ITO) coated polyethylene terephthalate (PETP) substrates by RF powered magnetron sputtering
Summary
Transparent conducting oxide (TCO) thin films have been extensively studied because it’s have very interesting properties in various electrical and optical application such as gas sensor, light-emitting diodes, solar cells, thin-film transistors and varistor [1,2]. ZnO have a wide direct band gap of 3.3 eV, high electrical conductivity, high optical transmission and high excitation binding energy of 60 meV, which makes the CuGaO2/ZnO heterojunction a demanding candidate in optoelectronic applications [7,8]. Plastic substrate is used in order to opens new application of CuGaO2/ZnO heterojunction thin films as transparent films that utilize curved surfaces, which means the plastic device are flexible and bendable to a large angle [10,11]. The annealing duration effect the p-CuGaO2/nZnO heterojunction diodes and has not been investigated yet
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