Annealing characteristics of highly P+-ion-implanted silicon crystal—two-step anneal

Abstract

Single-step and double-step annealing behavior of highly P+-ion-implanted layers was investigated by means of four-point probe measurements, x-ray double-crystal spectrometry, and electron diffraction patterns. The x-ray double-crystal spectrometry data indicated that, in the case of single-step annealing, the layer implanted with doses lower than 3×1015/cm2 ions was recovered with the increase of annealing temperature, while the sample implanted with doses of 1×1016/cm2 ions showed the opposite behavior. That is, the latter sample showed a very bad recrystallized layer with polycrystalline regions when it was annealed at temperatures higher than 1000 °C. However, in the case of double-step annealing, the higher-temperature annealing process, conducted after long 560 °C annealing, made it possible to obtain a good recrystallized layer, compared with the single-step annealing case. These results were confirmed by electron diffraction patterns.