Abstract
We have investigated the effect of implantation and annealing temperatures on crystalline quality, disorder recovery and dopant distribution in ZnO bombarded with Er ions using Rutherford backscattering/channeling spectrometry. The channeling results indicate that the damage retains a low level in as-implanted samples due to the dynamic annealing effect during implantation at 600°C. It is also found that the implantation disorder is well recovered when the samples are annealed at 1000°C for 30min. The results also demonstrate that many Er ions diffuse towards the surface during the whole annealing program. In particular, Er is distributed almost randomly after annealing at 1000°C for 30min.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
