Abstract
The structural aspects and annealing behavior of induced damage by Ga+ ion implantation of a GaAs single quantum well as investigated by transmission electron microscopy are presented. After rapid thermal annealing, vacancy and interstitial perfect dislocation loops are found on 〈110〉 and 〈111〉 type planes. In contrast to previous results from superlattices of AlGaAs/GaAs, we find dislocation loops in the AlGaAs as well as in the GaAs layer. The cathodoluminescence intensity of the implanted quantum well recovers completely after annealing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
