Abstract
Interstitial and vacancy loops in ion-irradiated copper have been studied through the use of x-ray diffuse scattering in the “Asymptotic” scattering region near the (111) reflection. Diffuse scattering measurements were made on copper single crystals irradiated at room temperature with He, O, and Si ions, and the results have been analyzed in terms of size distributions of interstitial and vacancy dislocation loops. The measurements were made in an “off-symmetry” direction (along the Ewald Sphere) using a single angular setting of a linear position sensitive detector. The He ion-irradiation was found to produce mainly interstitial loops while the 0 and Si irradiations produced both vacancy and interstitial loops.
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