Abstract
Using the example of polycrystalline films CdSe doped with I group elements by means of ion implantation, the structure rearrangement processes, including recrystallization, under annealing in various environments are discussed in detail. The interrelation of recrystallization and activation of an implanted impurity is found; it is shown that structural transformations under film recrystallization have a determining effect on activation of the implanted impurity and, as a consequence, on electrophysical and photoelectric properties of recrystallized films.
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