Abstract
The structure of the H or D saturation adsorbed Si(100)1×1 surface generated at 400 K, and its change by annealing and synchrotron radiation (SR) irradiation were investigated by infrared reflection absorption spectroscopy (IRRAS) using a CoSi2 buried metal layer (BML) substrate and reflection high-energy electron diffraction (RHEED) measurements. On 650 K annealing, the D saturation adsorbed Si(100)1×1 surface changes to 2×1 structure consisting of only D-Si-Si-D, which gives rise to an SiD stretching vibration band with a sharp, symmetric shape that peaked at around 1525 cm-1. If the SR irradiation is added to the annealing of the D saturation adsorbed Si(100)1×1 surface, the shape of the SiD stretching vibration band at 1525 cm-1 after 650 K annealing becomes broad and asymmetric. This is explained by the fact that D-Si-D is etched (desorbed) by the SR irradiation.
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