Abstract
Partially relaxed InP/InAlAs/InGaAs heterostructures, grown by molecular beam epitaxy under tensile and compressive misfit stress, have been investigated by means of high-resolution X-ray diffractometry and spectroscopic ellipsometry. Additionally, chemical etching was used to determine polarity of the crystals and threading dislocation densities in the epitaxial layers. The measurements revealed a distinct anisotropy of the strain relaxation along two orthogonal 〈110〉 directions in the (001) plane of the structures, which resulted from an asymmetry in the formation of two types of misfit dislocations at the interface. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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