Abstract
Abstract Anisotropic strain effects by strain relaxation on TE-polarized light emission characteristics of c-plane CdZnO/ZnO quantum well (QW) structures were theoretically investigated by using the multiband effective-mass theory. The CdZnO/ZnO QW structure with anisotropic strain has much larger emission intensity than conventional CdZnO/ZnO QW structure without the strain relaxation. In the case of the strain relaxation along x(or y)-direction, the x(or y)-polarized light emission is observed to be larger than the x(or y)-polarized light emission. In particular, in the case of the strain relaxation along both x- and y-directions, the increase in the spontaneous emission peak is significant. This can be explained by the fact that the internal field is reduced owing to the decrease in the piezoelectric field by the strain relaxation.
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