Abstract
The effects of depolarization on the electronic and the optical properties of InGaN/MgZnO quantum-well (QW) structures are investigated by using the multiband effective-mass theory. The average hole effective mass of the InGaN/MgZnO QW structure with a negligible internal field is shown to be similar to that of the conventional QW structure. On the other hand, the matrix element for the InGaN/MgZnO QW structure is improved greatly compared to that of the conventional InGaN/GaN QW structure because the internal field in the well is reduced. As a result, the light emission and the radiative recombination coefficient of the InGaN/MgZnO QW structure are found to be much larger than those of the conventional InGaN/GaN QW structure.
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