Anisotropic magnetoresistance and planar Hall effect in correlated and topological materials

Abstract

This article reviews the recent progress in understanding the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in two classes of quantum materials, the strongly correlated oxides and topological materials. After introducing the phenomenological description, we give a comprehensive survey of the experimental results, including the effects of temperature, magnetic field, strain, chemical doping, and electric field effect tuning. The material systems of interest include single-phase bulk and thin film materials, artificial nanostructures, surfaces and heterointerfaces, as well as superlattices. We focus on the critical information revealed by the AMR and PHE about the complex energy landscape in these emergent materials, elucidating their connection with magnetocrystalline anisotropy, charge correlation, spin-orbit coupling, band topology, and interface coupling.