Anisotropic magnetoresistance and anomalous Nernst effect in exchange biased permalloy/(1 0 0) NiO single-crystal

Abstract

We have investigated the anisotropic magnetoresistance (AMR) and the anomalous Nernst effect (ANE) in an exchange-biased bilayer consisting of a thin film of permalloy deposited on a single crystal antiferromagnetic NiO (100). The exchange bias field (HEB) value was obtained by means of AMR, ANE and magnetization hysteresis measurements. The shift of the hysteresis loop, measured with the three different techniques, yield approximately the same value of HEB. In spite of the measurement techniques be based in different physical phenomena, our results confirm the robustness of the exchange anisotropy at the Py/NiO interface. The strength of the anomalous Nernst effect for the exchange-biased permalloy film is compared to values measured in non biased films.