Abstract
Anisotropic etching of (100) silicon using KOH with 45° alignment tothe primary ⟨110⟩ wafer flat was investigated. It was shownthat in KOH solution with isopropyl alcohol added, high KOH concentration andtemperature caused the selection of {100} instead of {110} walls, allowingreliable fabrication of {100} walls with improved surface smoothness due tothe isopropyl alcohol. TMAOH solutions with methanol and isopropyl alcoholwere also found to produce both types of wall, with excellent surfacesmoothness for the {110} walls. A new maskless etching technique wasdeveloped for corner compensation of structures bounded by {110} walls.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
