Abstract
This paper presents the results from the investigation of the chemical anisotropic etching of single-crystal silicon 〈100〉 in the following solutions: KOH, K 3[Fe(CN) 6] 0.1 M, K 4[Fe(CN) 6] · 3H 2O 0.1 M, KNO 3 0.1 M and or complexant added. The complexants added in KOH solution were: calix[4]arenes, phenols and ether dibenzo-18-crown-6. The reaction mechanism, the etch rate, the roughness and the hillocks are analysed. The results allow us to use the redox system and/or the organic complexants to monitor the etching process, to obtain a smooth silicon surface with increased etch rate and to utilize the usual mask material resistant at the new etchants.
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