Abstract
In order to fill small via-holes and trenches for ultralarge scale integration (ULSI) interconnects, we propose an anisotropic chemical vapor deposition (CVD) method by which Cu is deposited at a high rate at the bottom of a trench compared to that at its side wall. The ion irradiation is the key to realize the anisotropic CVD. The anisotropy, which is a ratio of deposition rate at the bottom of a trench to that at its side wall, tends to increase with energy as well as flux of ions (H 3 + is the predominant ion) impinging on the substrate surface, while it does not depend on H flux. We demonstrate promising anisotropic filling of trenches by the anisotropic CVD method.
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