Angular rotation ion implantation technology in SiC for 4H-SiC junction barrier Schottky rectifiers

Abstract

• This study proposes an angular rotation ion implantation technology. • This technology could improve the rate of finished product products to be 90%. • With the angle rotation technology, the production cost will be saved effectively. SiC is widely used for making high level power electronic devices due to its excellent properties. SiC Junction Barrier Schottky (JBS) diodes have a low reverse leakage current and could offer fast switching and the Schottky-like on-state characteristics. High temperature ion implantation has been an essential process for the mainly doping formation SiC power electronic devices. In this work, the angular rotation ion implantation technology in SiC JBS has been investigated. The distribution of the injected elements has also been simulated, and the calculated results fitted well with the experimental results. With this angular rotation technology the power loss of the SiC JBS diodes have been reduced, effectively. And the rate of finished product was turned out to be as high as 90%. This method can greatly reduce the process flow, reduce the damage to the wafer and save production cost, which has great significance in quantity production.