Abstract
We report angular dependent X-ray absorption measurements at the Mo L 3,2 edge and the Si K-edge for a MoSi 2 single crystal. The crystal was oriented so that an azimuthal rotation of the crystal about the surface normal (direction of the incident photons) would align the c-axis of the crystal anywhere between parallel and perpendicular to the polarization of the photons. It was found that while the Mo L 3,2 edge XANES shows little angular dependence, the Si K-edge XANES shows a very strong polarization dependence of which the intensity exhibits a two-fold symmetry. This angular dependence of the Si K-edge XANES is attributed to the high densities of unoccupied states localized perpendicular to the Si-Si bond.
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