Abstract
The correlation between angular dependences of surface composition and sputtering yield of Si by N 2 + ions was found. It may explain anamalous (in comparison to Ar + ion bombardment on Si) sharp increasing of sputtering yield at angles of ion incidence over 30°. Angular range of ripple formation on Si surface bombarded by 1.5–9 keV N 2 + ions was measured. It belongs to the interval of angles of ion incidence where heterogeneity of surface layers and pronounced changes of sputtering were observed.
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