Angular correlation of annihilation radiation associated with vacancy defects in electron-irradiated6H-SiC

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Electron-positron momentum distributions associated with vacancy defects in $6H$-SiC after irradiation with 2-MeV electrons and annealing at 1000 \ifmmode^\circ\else\textdegree\fi{}C have been studied using angular correlation of annihilation radiation measurements. It was confirmed that the above vacancy defects have dangling bonds along the $c$ axis and the rotational symmetry around it. The first-principles calculation suggested that the vacancy defects are attributable to either carbon-vacancy-carbon-antisite complexes or silicon-vacancy-nitrogen pairs, while isolated carbon vacancies, silicon vacancies, and nearest neighbor divacancies are ruled out.