Abstract
Electron scattering and diffraction in X-ray photoelectron Spectroscopy (XPS) are used to characterize GaAs(001) chemically etched surfaces. Ga2 p 3 2 Ga3 d, As2 p 3 2 and As3 d photoelectrons and Ga LMM and As LMM Auger electrons are observed as a function of polar angle for the [110] and [110] azimuths. The kinetic energy of these photoelectrons covers the range from 160 to 1440 eV. for such energies, the experimental results are correctly predicted by the single-scattering cluster plane-wave model. We also examine, using simple models, the expected influence of spherical-wave and multiple scattering. The problems of quantitative measurement in XPS are discussed in relation to the diffraction phenomena.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Electron Spectroscopy and Related Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
