Abstract
Abstract Well ordered, unreconstructed, C-terminated surfaces of 6H-SiC(000 1 ) were obtained after treatment with a hydrogen microwave plasma. From angle resolved photoemission spectra (ARPES) measured at normal emission for photon energies between 40 and 60 eV valence band energies at the Γ and A critical points of the hexagonal Brillouin zone of 6H-SiC are derived. The boundaries of the ionic gap (9.3 and 10.5 eV) and the total valence band width of 15.5 eV are determined using X-ray excited photoemission spectra. The results are compared with pertinent band structure calculations.
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