Abstract
Weak localization and universal conductance fluctuations in Si-doped GaAs films and wires are investigated. A positive magnetoresistance due to antilocalization is observed in films of high carrier density. It disappears when the substrate is irradiated by an Ar ion beam. The spin-orbit scattering time τso is strongly dependent on the carrier density ns. The ratio of the elastic scattering time τ0 to τso has a power-law dependence of (τ0/τso)\\proptns-2.9. The amplitude of the conductance fluctuations are discussed in terms of the phase breaking time deduced ffom the weak localization.
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