Analyzing the growth of InxGa1−xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

Abstract

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with InxGa1−xN quantum wells inserted to form an axial superlattice. From the ω−2θ scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the InxGa1−xN quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.