Abstract
Recently, potassium fluoride post-deposition treatment (KF-PDT) attracts more attention for which has beneficial effect on open circuit voltage (Voc) with the CIGS solar cell conversion efficiency increased from 20.3 % to 22.9 %. However, the short circuit current density (Jsc) and fill factor (FF) are not always increased after KF-PDT. In this study, we investigate the absorber characteristics after KF-PDT and analyze the major factors which limit the improvement of Jsc and FF with SCAPS simulation. According to the simulation results, we find that the declining of Jsc and FF are due to the high electronic barrier formed at the interface of absorbe1(KInSe2)/absorber2 after KF-PDT. However, the high electronic barrier can be lowered by increasing of ZnCu or CdCu concentration near absorber surface and by reducing the defects concentration on the buffer/absorber interface, thereby the improvement of Jsc and FF. In addition, the device performance of conduction band offset ΔAB≥0 eV at buffer/absorber interface is enhanced obviously after potassium post treatment. Therefore, increasing the ZnCu or CdCu concentration and maintaining the ΔAB≥0 eV are key points to further improve the device performance after KF-PDT.
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