Analytical threshold voltage model for short channel double-gate SOI MOSFETs

Abstract

Solving a two-dimensional (2-D) Poisson equation and assuming the minimum potential determines the threshold voltage, V/sub th/, we derived a model for V/sub th/ of short channel double-gate SOI MOSFETs, and verified its validity by comparing with numerical data. We evaluated the threshold voltage lowering, /spl Delta/V/sub th/, and subthreshold swing (S-swing) degradation with decreasing gate length L/sub G/, and showed that we can design a 0.05-/spl mu/m-L/sub G/ device with /spl Delta/V/sub th/ of less than 50 mV and an S-swing of less than 70 mV/decade if 10-nm-thick SOI is available.