Abstract
The exact solution of the two-dimensional (2-D) Poisson's equation has been analytically derived for fully-depleted (FD) SOI MOSFETs with Halos or pockets. The approach uses a three-zone Green's function solution technique. Explicit equations for the 2-D electrical potential as well as for both front- and back-side threshold voltages have been derived. The accuracy of the equations has been verified by a 2-D numerical device simulator. From the presented results, it can be concluded that the analytically derived model for the electric potential and threshold voltages are in good agreement with 2-D numerical simulation data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
