Abstract
The excitation and relaxation of spatially confined excitons in semiconductor quantum dots have been considered. The temperature dependence of the luminescence of quantum dots in dielectric matrices is described by the model taking into account the singlet-triplet intercombination conversion of spatially confined excitons. The analytical expression describing the temperature dependence of photoluminescence is derived and the physical meaning of the constants involved in this expression is determined. The applicability of the expression to the analysis of the luminescent properties of the quantum dots is demonstrated by the example of silicon nanoclusters in a thin-film SiO2 matrix.
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