Abstract
Using a perturbation theory, we derived an analytical surface potential expression for subthreshold and strong-inversion regions. This enabled us to derive analytical models for the subthreshold slope, threshold voltage, and induced electron concentration of a double-gate SOI MOSFET. We also clarified the dependence of the device characteristics on device parameters, and explained the ideal subthreshold factor. We do not expect volume inversion in practical devices. Our models' predictions agree well with numerical and experimental data.
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