Abstract
AbstractNoise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficients. Finally, the minimum noise figure is evaluated by incorporating the extrinsic noise sources and compared with the experimental data, which is in excellent agreement. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 410–417, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11396
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