Abstract
AbstractDue to the higher switching speed and lower threshold voltage of SiC MOSFET, its crosstalk issue is more serious than that of Si devices. Firstly, the mechanism and process of crosstalk under resistive load and inductive load are compared and analyzed. Then, a parameter decoupling method based on energy conservation is proposed, and an analytical model of the crosstalk voltage under resistive load is established. Moreover, an analytical model of the crosstalk voltage under inductive load with only device and circuit parameters is introduced. Furthermore, the influence of the drive resistance and the common source inductance on the crosstalk voltage under different loads is evaluated through the analytical model. Finally, a double pulse test is carried out to verify the validity of the analysis. The results presented here can provide guidance for the design of gate circuit parameters to regulate the crosstalk issue of SiC MOSFETs under different loads.
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