Analytical models for the growth by metal organic vapour phase epitaxy: III. Applications

Abstract

For part II see ibid., vol.5, p.36 (1990). In parts I and II models are derived in which diffusion of growth species and surface kinetics are combined to describe the growth rate and depletion effect in horizontal metal organic vapour phase epitaxy reactors. Some examples are given in order to show the validity of the models. It is demonstrated that, using the analytical expressions as derived earlier, the experimental growth results for GaAs in the diffusion-limited region can be described well using values for the diffusion coefficient at room temperature D0 and the thermal diffusion factor alpha T of trimethylgallium (TMG) of 0.7 cm2 s-1 and 1.0, respectively. The low-temperature growth of GaAs, which is kinetically limited, is modelled using data on the decomposition of TMG. The models are not restricted to the use in MOVPE systems as is shown in the case of the growth of Si from SiH4, where the calculated growth rates in both the diffusion-limited region as well as in the kinetic-limited region can be accurately described using kinetical data for the decomposition of SiH4. On the same basis, also the doping of GaAs with SiH4 is described.