Abstract
This paper deals with an analysis of γ-irradiation effects on basic electrical characteristics of power VDMOS transistors operated in both linear and saturation regions. First, an analytical model that yields the drain current and transconductance dependencies on gate oxide charge density is developed. The experimental data are utilized to establish a direct relation between the absorbed irradiation dose and the corresponding effective density of gate oxide charges. The drain current and transconductance of VDMOS devices are then modelled as the functions of radiation dose. Finally, the results of modelling are compared with experimental data.
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