Abstract
At the nanoscale, many multigate devices are being studied in order to reduce their size and improve their performance. This paper describes the design and development of a novel device known as the Triple Material Surrounding Gate Tunnel Field Effect Transistor (TMSGTFET). The advantages of encircling gate and tunnel FET are combined to build a novel structure. The gate material around the device is replaced with three gate materials with various work functions to prevent short channel effects. The device's surface potential, lateral electric field, vertical electric field, and drain current are all modelled in two dimensions, with the results explained. By altering the thickness of the ferroelectric layer and ferroelectric material, as well as verifying the simulation findings with MATLAB, we study the impacts of device parameters on the channel potential and on-state current. The findings show that raising the ferroelectric layer thickness enhances the device's characteristics by reducing the shortest tunnelling length. Furthermore, the proposed analytical model shows increased ON current. CAD simulation is used to test the model's improved device properties, confirming that it is accurate
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