Abstract
In this article, we report on the analysis of the ON-state behavior of polarization super-junction (PSJ) heterojunction field-effect transistors (HFETs). Theoretical models for calculating the sheet densities of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) are proposed and calibrated with numerical simulations and experimental results. To calculate the area-specific ON-state resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{({\text{ON}, \text{sp}})}$ </tex-math></inline-formula> ) of PSJ HFETs, ohmic gate (OG) structures are considered herein. The calculated results are well fit with the simulated and measured results at different PSJ length ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {PSJ}}$ </tex-math></inline-formula> ) conditions at room temperature.
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