Abstract
A new analytical model for InAlAs/InGaAs heterojunction, InP based high electron mobility transistor (HEMT) incorporating the depletion effect in the InAlAs region is developed and extended to predict sheet carrier density, the effect of parallel conduction through variation of depletion width, potential at the interface of depletions and Δ E c− E f with gate voltage. The sheet carrier density obtained shows excellent agreement with the available results and gives a new solving procedure for HEMT from MESFET analysis.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
