Abstract
In this paper, a detailed physical analysis and an analytical derivation of the degradation of the output resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</sub> ) observed in relatively long-channel laterally nonuniformly doped devices with halo implants are presented. Two-dimensional device simulations were performed, and the simulations show that the channel can be split into two uniformly doped transistors in series for the purpose of analysis. The lower doped bulk transistor is on the source side, while the higher doped halo transistor is toward the drain end. Based on this two-transistor analysis, a simple R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</sub> degradation model is derived for implementation in a MOSFET compact model
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.