Abstract
Currently Tunnel Field Effect Transistors (TFET) have picked up tremendous recognition in bio-sensing applications. Having a similar perspective, this paper proposes a preliminary novel channel centre potential based analytical model for broken gate TFET biosensor device. The model incorporates dielectric modulation and steric hindrance effects and demonstrates the effect of device parameter variations and partial hybridization in the nano-cavity on the sensitivity of the bio-sensor. Two types of fill profiles have been examined for sensitivity variation. The model shows good agreement with the real time TCAD simulation data and existing literature. Also, the model proves its robustness by responding in conditions of low channel occupancy (∼40%) and for biomolecules ranging from medical to industrial grade (high-K). The model is computationally intuitive and provides scope for application specific optimizations. The broken structure helps in reducing the ambipolarity without adversely affecting the sensitivity of the biosensor.
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