Analytical modeling of architecture dependent atypical scaling trends in metal–Hf0.5Zr0.5O2–metal-SiO2–Si negative capacitance transistors

Abstract

In order to better understand the possible improvement through the incorporation of a ferroelectric (FE) layer in the gate stack of the nanoscale transistor, this work develops analytical expressions to assess the scalability of cylindrical (CYL) nanowire and planar double gate (DG) metal–FE–metal–insulator–semiconductor (MFMIS) negative capacitance (NC) transistors. While predicting a sub-60 mV dec−1 subthreshold swing and a negative drain induced barrier lowering (DIBL), the results indicate that at lower FE thickness, the performance of the NC field effect transistor (NCFET) is primarily governed by the electrostatic integrity of the baseline transistor, i.e. the CYL architecture outperforms planar DG NCFET. However, for relatively thicker T FE, the performance of an MFMIS NCFET is strongly governed by the FE coupling, which indicates the comparable performance of DG and CYL MFMIS NCFETs. The formalism, while predicting atypical trends, showcases a pragmatic design criterion for achieving a sub-60 mV dec−1 subthreshold swing and DIBL-free characteristics in MFMIS NC transistors.