Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

Abstract

AbstractA physics‐based analytical model for quaternary AlInGaN high electron mobility transistors (HEMTs) is developed including two‐dimensional electron gas (2DEG) and two‐dimensional hole gas (2DHG) for microwave applications. The DC and RF performance characteristics are explored by considering the quasi‐triangular quantum well (QW). The derived charge carrier densities nsand psare considered for energy subbands Eo and E1 inside QW. The 2DEG sheet carrier concentration density remains constant as long as 2DHG exists. From the derived model, the drain current (Id), transconductance current gain (gm), and cutoff frequency (ft) for different gate length and width are verified with experimental data for upcoming nano‐scale devices.