Abstract
Drain current modeling of dual material (DM) trigate TFET under the influence of radiation induced defects characterized by oxide trapped charges and ionized interface traps is formulated in this present research endeavor. An analytical methodology incorporating three dimensional Poisson's equation and Kane's approach introducing the impact of charge traps is derived here to explore the radiation response of the device. Radiation induced device characterization is then investigated in terms of electrostatic potential distribution, electric field profile and drain current performance of DM trigate TFET. Charge trapping and device parameters variation are further examined to capture the device response to radiation effect. Relevant simulated data extracted by ATLAS device simulator is used to substantiate the derived analytical model presented in this paper.
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