Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

Abstract

We present a modified surrounding-gate metal–oxide–semiconductor field effect transistor (MOSFET), in which the gate consists of two metals with different work functions, and single-halo doping is added to the channel near the source end. The performance of the modified structure was studied by developing physics-based analytical models for the surface potential, electric field, and threshold voltage. It is shown that the novel MOSFET could significantly reduce threshold voltage roll-off and drain-induced barrier lowering, and simultaneously improve carrier transport efficiency by carefully configuring the halo doping and work functions of the dual-material gate. The results predicted using the models are compared with those obtained with the three-dimensional simulator Davinci to verify the accuracy of the proposed analytical models.