Abstract
An analytical model of dual material single gate doping-less Tunnel FET (DM-GU-TFET) with gate underlap regions has been proposed. The potential of gate underlap area with channel area has been examined using modeling and the results are validated using TCAD simulation at boundary conditions. The proposed structure has been divided into ten distinct sections (counting source/drain depleted sections) to get potential models while settling the 1-Dimensional and 2-Dimensional Poisson equations (PE) condition in the respective sections. To settle the PE's at different limit conditions, explanatory estimate strategy is proposed and tested. The effect of geometric morphology, for instance under-lap length, has been analyzed, which is dependent on electrical attributes of DM-GU-TFET. The parabolic approximation technique is used to settle the PE's at various interface conditions. The effect of structural variations viz. gate underlap length and tunneling length is scrutinized using electrical characteristics of DM-GU-TFET. The resultant characteristics of proposed dopingless TFET represent a noteworthy improvement in surface potentials with variation in length of spacer region, underlap section and tunneling region.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
