Abstract
In this paper, a gate underlap Dielectric Modulated (DM) Double Gate (DG) Junctionless (JL) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been investigated through exhaustive device simulation for the label free electrical detection of the biomolecules. The shift in the threshold voltage has been considered as the sensing parameter of the device to detect the presence of biomolecules when they are immobilized in the gate underlap channel region.
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