Analytical model for RESET operation of Phase Change Memory

B Rajendran,M Breitwisch,M-H Lee,C Lam,R Cheek,A Schrott,J Karidis,Y-H Shih,H-L Lung,G W Burr

doi:10.1109/iedm.2008.4796748

Analytical model for RESET operation of Phase Change Memory

B Rajendran, M Breitwisch + Show 8 more

https://doi.org/10.1109/iedm.2008.4796748

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Publication Date: Dec 1, 2008

Citations: 23

Affiliation: IBM Research - Thomas J. Watson Research Center, Macronix International (Taiwan)

#Operation Of Phase Change Memory #Phase Change Memory + Show 8 more

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Abstract

We present a novel analytical model for the RESET operation of Phase Change Memory (PCM) that explicitly describes the dependency of the programming current on various cell dimensions and material parameters. This model also explains, for the first time, the fundamental physics behind the inverse relationship between dynamic resistance(Rd) and the amplitude of the programming current.

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