Abstract
Metalized film capacitors in a.c. applications suffer high frequency and high voltage, which will induce electrode corrosion, leading to capacitance degradation. The intrinsic mechanism of the corrosion is oxidation caused by ionic migration in the oxide film formed on the electrode surface. In this work, a D-M-O illustration structure for the nanoelectrode corrosion process is established, and thereby, an analytical model is derived to study the influences of frequency and electric stress on corrosion speed in a quantitative approach. The analytical results well conform to the experimental facts. It is found the corrosion rate rises with frequency and finally tends to reach a saturation value. The electric field in oxide has an exponential-like contribution to the corrosion rate. In the case of aluminum metalized films, the saturation frequency and minimum field required for corrosion initiation are, respectively, 3434Hz and 0.35 V/nm calculated by the proposed equations.
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