Abstract
Signal generation from semiconductor detectors has been modeled considering incomplete charge signal due to the charge trapping within a detector as well as to the ballistic deficit caused by insufficient charge collection time. The analytical formalism was experimentally confirmed with the charge collection efficiency of a planar mercuric iodide (HgI2) detector. The developed model is useful for the characterization of detector material properties such as the mobility and the lifetime, as well as the optimization of operation conditions such as the applied bias and the charge collection time.
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